Errata to RX210 Group User's Manual regarding ROM Characteristics
Contents
1. Date Nov 26 2012 RENESAS TECHNICAL UPDATE 1753 Shimonumabe Nakahara ku Kawasaki shi Kanagawa 211 8668 Japan Renesas Electronics Corporation Product MPU MCU Document Category No TN RX AO042A E Rev 1 00 Title Errata to RX210 Group User s Manual regarding Information ROM Characteristics Category Technical Notification RX210 Group User s Manual Hardware RX210 Group Reference pay 110 All Document R01UH0037EJ0110 Applicable Product This document describes corrections to Table 41 52 in 41 11 ROM Flash Memory for Code Storage Characteristics in RX210 Group User s Manual Hardware Rev 1 10 Corrections Corrected descriptions of the reprogramming erasure cycle and data hold time in Table 41 52 ROM Flash Memory for Code Storage Characteristics 1 as follows Table 41 52 ROM Flash Memory for Code Storage Characteristics 1 Reprogramming erasure cycle Data hold time 2 FCU reset ime tecur 20 ps or longer and FCLK x 6 or greater Note 1 Definition of reprogram erase cycle The reprogram erase cycle is the number of erasing for each block When the reprogram erase cycle is n times n 1000 erasing can be performed n times for each block For instance when 128 byte programming is performed 16 times for different addresses in 2 Kbyte block and then the entire block is erased the reprogram erase cycle is counted as one However programming the same address for several time2. s as one erasing is not enabled overwriting is prohibited Note 2 This indicates the characteristic when mepa is emia within the AEUR including the minimum number c 2012 Renesas Electronics Corporation All rights reserved Page 1 of 1 CENESAS
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