Philips TDA1561Q User's Manual
Contents
1. 10 20 Bp THD N w 1 18 So 2 F 16 1 14 107 2 12 102 10 2 3 4 5 10 10 10 104 qu 10 10 10 108 104 f Hz 10 1 Po 10W 1 For OUT2 2 Po 1W 2 For OUT1 Fig 19 THD noise as a function of frequency Fig 20 Power bandwidth at THD 1 MBH702 MBH703 36 20 Gy SVRR dB dB on 34 40 32 60 30 80 mute 28 100 off 26 120 102 108 104 105 106 1 10 108 104 10 10 0 0 0 0 t Hz 0 0 0 0 0 uz 10 Vin 50 mV Viipple p p 2V Fig 21 Gain as a function of frequency Fig 22 SVRR as a function of frequency 1997 Aug 14 19 Philips Semiconductors Preliminary specification 2x 23 W high efficiency car radio power TDA1561Q amplifier MBH704 0 10 kQ 5 V 40 uA o MODE 47 uF i MBH690 100 10 102 103 104 f Hz 10 1 Po 21 W 2 Pg 2 10 W Fig 23 Channel separation as a f2. MBH694 MBH695 12 125 lg Vo mA V 100 l 8 i l 75 l f i l 50 i 4 I i i 25 l 0 0 0 8 16 Vp V 24 0 8 16 Vp V 24 Vins 5 V Vins 5 V Ry o Fig 13 DC output voltage as a function of Vp Fig 14 Quiescent current as a function of Vp 1997 Aug 14 17 Philips Semiconductors 2 x 23 W high efficiency car radio power Preliminary specification TDA1561Q amplifier MBH696 MBH697 160 80 Ip IMODE mA gpa 120 48 32 16 l 7 0 6 8 0 2 4 6 8 VMODE V VMopE V Vp 2144V Vin 20mV Ri oo Fig 15 Ip as a function of Vms pin 3 Fig 16 Ims as a function of Vms 60 MBH698 1 02 MBH699 P THD N o W 1 10 40 2 1 3 20 107 9 3 o 1071 1 10 102 4 1 13 2 1 1 8 0 8 3 5 6 Vp V 8 Po W Both channels driven 1 SEIN 1 f 10 kHz 2 THD 10 2 f kHz Uae 3 f 100 Hz Fig 17 Output power as a function of Vp Fig 18 THD noise as a function of Po 1997 Aug 14 18 Philips Semiconductors Preliminary specification 2x 23 W high efficiency car radio power TDA1561Q amplifier MBH700 MBH701
3. 2 K W the thermal resistance of the heatsink should be 130 60 1 3 0 2 7 5 K W 2x5 Compared to a conventional BTL amplifier the TDA1561Q has a higher efficiency The thermal resistance of the heatsink should be 150 60 EA 2x5 13 02 13 8 K W 1997 Aug 14 Preliminary specification TDA1561Q virtual junction OUT1 OUT OUT2 OUT2 3 6 K W od 8 6 K W 0 6 K W 0 6 K W MGC424 0 1 K W case Fig 3 Thermal equivalent resistance network Philips Semiconductors Preliminary specification 2 x 23 W high efficiency car radio power i TDA1561Q amplifier DC CHARACTERISTICS Vp 14 4 V Tamb 25 C measured in Fig 6 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT Vp supply voltage note 1 6 0 14 4 18 0 lq quiescent current RL 150 lstb standby current Vc average electrolytic capacitor voltage at pin 11 AVo DC output offset voltage on state mute state Mode select switch see Fig 4 voltage at mode select pin standby condition pin 3 mute condition on condition SE BTL mode on condition SE mode only Ims switch current through pin 3 Vms 5 V Protection BTL disable temperature B 145 I fe Note 1 The circuit is DC biased at Vp 6 to 18 V and AC operating at Vp 8 to 18 V Yy SE Only SE BTL Mute Standby MLD216 Fig
4. 4 Switching levels of mode select switch 1997 Aug 14 8 Philips Semiconductors Preliminary specification 2 x 23 W high efficiency car radio power um TDA1561Q amplifier AC CHARACTERISTICS Vp 14 4 V RL 24 Q C44 1000 uF f 1 KHZ Tamb 25 C measured in Fig 6 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT output power THD 1 THD 10 15 21 EIAJ Vp 13 2 V THD 10 total harmonic distortion Po 1 W f 1 kHz note 1 eo cr Acc with respect to 15 W 15000 fro low frequency roll off 1 dB note 2 z high frequency roll off 1dB 3o closedloopvolage gain z s supply voltage ripple rejection Rs 0 Q Viippie 2 V p p on fz 1 kHz mute f 1 kHz standby f 100 Hz to 10 kHz 80 common mode rejection ratio Rs 0 Q f 1 kHz input impedance mismatch in input impedance SE to BTL switch voltage level note 3 output voltage mute RMS value 1 V RMS noise output voltage on Rs 0 Q note 4 160 on Rs 10 kQ note 4 170 mute note 5 channel separation Rs 0Q AGy channel unbalance Notes 1 The distortion is measured with a bandwidth of 10 Hz to 30 kHz Frequency response externally fixed input capacitors determine low frequency roll off The SE to BTL switch voltage level depends on Vp Noise output voltage measured with a bandwidth of 20 Hz to 20 kHz ark wo DN Noise output voltage i
5. Preliminary specification 2 x 23 W high efficiency car radio power i TDA1561Q amplifier ADDITIONAL APPLICATION INFORMATION MBH692 MBH693 25 25 Pg Pg W W 20 20 1 1 15 15 2 10 10 E 5 5 0 0 0 2 4 6 8 p w 0 2 4 6 8 p w Input signal 1 kHz sinusoidal Vp 14 4 V 1 Fora conventional BTL amplifier 1 Fora conventional BTL amplifier 2 For TDA1561Q 2 For TDA15610Q ue Fig 10 Dissipation pink noise through IEC 268 Fig 9 Dissipation sine wave driven filter 430Q 2 2uF 3300 2 2 uF 470 nF C I L 31 4I I Ik 3 3 91 3 3 6 10 input ka I nF ko ji kg SU MGC428 Fig 11 IEC 268 filter 1997 Aug 14 16 Philips Semiconductors Preliminary specification 2 x 23 W high efficiency car radio power amplifier TDA1561Q on condition IN1 OUT 220 nF 10 nF i 90 390 OUTI Ru 100 nF zb 100 nF SUM IEC 268 zn FILTER CIN E Hk T s 1000 uF pink 77 220 nF We AGN noise SIE 1 L 10 L 100 TT nF T nF TDA1561Q 40390 390 OUT 220 nF a IN2 II GND1 GND2 MGC427
6. ended SE mode common input input 2 MLD215 Fig 2 Pin configuration 1997 Aug 14 4 Philips Semiconductors 2 x 23 W high efficiency car radio power amplifier FUNCTIONAL DESCRIPTION The TDA1561Q contains two identical amplifiers with differential inputs At low output power up to output amplitudes of 3 V RMS at Vp 14 4 V the device operates as a normal SE amplifier When a larger output voltage swing is needed the circuit switches internally to BTL operation With a sine wave input signal the dissipation of a conventional BTL amplifier up to 2 W output power is more than twice the dissipation of the TDA1561Q see Fig 9 In normal use when the amplifier is driven with music like signals the high BTL output power is only needed for a small percentage of time Under the assumption that a music signal has a normal Gaussian amplitude distribution the dissipation of a conventional BTL amplifier with the same output power is approximately 7096 higher see Fig 10 The heatsink has to be designed for use with music signals With such a heatsink the thermal protection will disable the BTL mode when the junction temperature exceeds 145 C In this case the output power is limited to 5 W per amplifier The gain of each amplifier is internally fixed at 32 dB With the MODE pin the device can be switched to the following modes e Standby with low standby current 50 uA e Mute conditio
7. less than 300 C it may remain in contact for up to 10 seconds If the bit temperature is between 300 and 400 C contact may be up to 5 seconds This data sheet contains target or goal specifications for product development Preliminary specification Product specification This data sheet contains preliminary data supplementary data may be published later This data sheet contains final product specifications Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System IEC 134 Stress above one or more of the limiting values may cause permanent damage to the device These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied Exposure to limiting values for extended periods may affect device reliability Application information Where application information is given it is advisory and does not form part of the specification LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances devices or systems where malfunction of these products can reasonably be expected to result in personal injury Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale 1997 Aug 14 23 Philips Semico
8. oooQooo O O Vp Mode select Cool Power m s o o 4 x 220 nF SF 5 aF Out 1 Out 2 O O O TDA1561Q Int sgnd In2 MGK182 Dimensions in mm Fig 7 PCB layout component side for the application of Fig 6 1997 Aug 14 12 Philips Semiconductors Preliminary specification 2 x 23 W high efficiency car radio power amplifier TDA1561Q 86 36 43 18 e o o oo00000 o o e gnd GND o o oooQooo o o o Mode Vp E o o d La o0 00 m r ome Nc O 0 Q In2 sgnd Int MGK183 Dimensions in mm Fig 8 PCB layout soldering side for the application of Fig 6 1997 Aug 14 13 Philips Semiconductors Preliminary specification 2x 23 W high efficiency car radio power TDA1561Q amplifier INTERNAL PIN CONFIGURATIONS PIN NAME EQUIVALENT CIRCUIT 1 12 13 IN1 CIN IN2 i MLD217 MLD218 TM LL 1 MLD221 3 MODE gt 1997 Aug 14 14 Philips Semiconductors 2 x 23 W high efficiency car radio power amplifier NAME Preliminary specification TDA1561Q EQUIVALENT CIRCUIT OUT1 OUT2 Vp pins 5 9 MLD220 OUT1 OUT2 g pins 6 8 d MLD219 amt MLD222 1997 Aug 14 15 Philips Semiconductors
9. 25 Tel 91 22 493 8541 Fax 91 22 493 0966 Indonesia see Singapore Ireland Newstead Clonskeagh DUBLIN 14 Tel 353 1 7640 000 Fax 353 1 7640 200 Israel RAPAC Electronics 7 Kehilat Saloniki St PO Box 18053 TEL AVIV 61180 Tel 972 3 645 0444 Fax 972 3 649 1007 Italy PHILIPS SEMICONDUCTORS Piazza IV Novembre 3 20124 MILANO Tel 39 2 6752 2531 Fax 39 2 6752 2557 Japan Philips Bldg 13 37 Kohnan 2 chome Minato ku TOKYO 108 Tel 81 3 3740 5130 Fax 81 3 3740 5077 Korea Philips House 260 199 Itaewon dong Yongsan ku SEOUL Tel 82 2 709 1412 Fax 82 2 709 1415 Malaysia No 76 Jalan Universiti 46200 PETALING JAYA SELANGOR Tel 60 3 750 5214 Fax 60 3 757 4880 Mexico 5900 Gateway East Suite 200 EL PASO TEXAS 79905 Tel 49 5 800 234 7381 Middle East see Italy For all other countries apply to Philips Semiconductors Marketing amp Sales Communications a worldwide company Netherlands Postbus 90050 5600 PB EINDHOVEN Bldg VB Tel 31 40 27 82785 Fax 31 40 27 88399 New Zealand 2 Wagener Place C P O Box 1041 AUCKLAND Tel 64 9 849 4160 Fax 64 9 849 7811 Norway Box 1 Manglerud 0612 OSLO Tel 47 22 74 8000 Fax 47 22 74 8341 Philippines Philips Semiconductors Philippines Inc 106 Valero St Salcedo Village P O Box 2108 MCC MAKATI Metro MANILA Tel 63 2 816 6380 Fax 63 2 817 3474 Poland UI Lukiska 10 PL 04 123 WARSZAWA Tel 48 22 612 2831 Fax
10. 48 22 612 2327 Portugal see Spain Romania see Italy Russia Philips Russia Ul Usatcheva 35A 119048 MOSCOW Tel 7 095 755 6918 Fax 7 095 755 6919 Singapore Lorong 1 Toa Payoh SINGAPORE 1231 Tel 65 350 2538 Fax 65 251 6500 Slovakia see Austria Slovenia see Italy South Africa S A PHILIPS Pty Ltd 195 215 Main Road Martindale 2092 JOHANNESBURG P O Box 7430 Johannesburg 2000 Tel 27 11 470 5911 Fax 27 11 470 5494 South America Rua do Rocio 220 5th floor Suite 51 04552 903 S o Paulo SAO PAULO SP Brazil Tel 55 11 821 2333 Fax 55 11 829 1849 Spain Balmes 22 08007 BARCELONA Tel 34 3 301 6312 Fax 34 3 301 4107 Sweden Kottbygatan 7 Akalla S 16485 STOCKHOLM Tel 46 8 632 2000 Fax 46 8 632 2745 Switzerland Allmendstrasse 140 CH 8027 Z RICH Tel 41 1 488 2686 Fax 41 1 481 7730 Taiwan Philips Semiconductors 6F No 96 Chien Kuo N Rd Sec 1 TAIPEI Taiwan Tel 886 2 2134 2865 Fax 886 2 2134 2874 Thailand PHILIPS ELECTRONICS THAILAND Ltd 209 2 Sanpavuth Bangna Road Prakanong BANGKOK 10260 Tel 66 2 745 4090 Fax 66 2 398 0793 Turkey Talatpasa Cad No 5 80640 G LTEPE ISTANBLL Tel 90 212 279 2770 Fax 90 212 282 6707 Ukraine PHILIPS UKRAINE 4 Patrice Lumumba str Building B Floor 7 252042 KIEV Tel 380 44 264 2776 Fax 380 44 268 0461 United Kingdom Philips Semiconductors Ltd 276 Bath Road Hayes MIDDLESEX UB3 5BX Tel 44 1
11. 81 730 5000 Fax 44 181 754 8421 United States 811 East Arques Avenue SUNNYVALE CA 94088 3409 Tel 1 800 234 7381 Uruguay see South America Vietnam see Singapore Yugoslavia PHILIPS Trg N Pasica 5 v 11000 BEOGRAD Tel 381 11 625 344 Fax 381 11 635 777 Internet http www semiconductors philips com Building BE p P O Box 218 5600 MD EINDHOVEN The Netherlands Fax 31 40 27 24825 Philips Electronics N V 1997 SCA55 All rights are reserved Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner The information presented in this document does not form part of any quotation or contract is believed to be accurate and reliable and may be changed without notice No liability will be accepted by the publisher for any consequence of its use Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights Printed in The Netherlands 547027 1200 05 pp24 Philips Semiconductors Date of release 1997 Aug 14 Document order number 9397 750 02732 Let make things better S PHILIPS
12. INTEGRATED CIRCUITS DATA SHEET TDA1561Q 2 x 23 W high efficiency car radio power amplifier Preliminary specification 1997 Aug 14 Supersedes data of 1997 Jun 11 File under Integrated Circuits ICO1 Philips PHILIPS Semiconductors DH LI p Philips Semiconductors Preliminary specification 2 x 23 W high efficiency car radio power amplifier TDA1561Q FEATURES Low dissipation due to switching from Single Ended SE to Bridge Tied Load BTL mode High Common Mode Rejection Ratio CMRR Mute standby operating SE only mode select pin Zero crossing mute and standby circuit Load dump protection circuit Short circuit safe to ground to supply voltage and across load Loudspeaker protection circuit GENERAL DESCRIPTION The TDA1561Q is a monolithic power amplifier in a 13 lead single in line SIL plastic power package It contains two identical 23 W amplifiers The dissipation is minimized by Switching from SE to BTL mode only when a higher output voltage swing is needed The device is primarily developed for car radio applications Device switches to single ended operation at excessive junction temperatures QUICK REFERENCE DATA SYMBOL PARAMETER TYP MAX Vp supply voltage repetitive peak output current CONDITIONS DC biased 14 4 non operating load dump total quiescent current standby current output power input impedance RL 4 Q EIAJ voltag
13. car radio power TDA1561Q amplifier LIMITING VALUES In accordance with the Absolute Maximum Rating System IEC 134 SYMBOL PARAMETER CONDITIONS MIN MAX UNIT Vp supply voltage operating non operating load dump t gt 2 5 ms VP sc short circuit safe voltage V loRM repetitive peak output current 4 Tstg storage temperature 55 150 2 virtual junction temperature 150 C 18 rp reverse polarity voltage 6 losm non repetitive peak output current 6 j C Tamb operating ambient temperature 40 C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS UNIT Rth c thermal resistance from junction to case see note 1 KW Rih a thermal resistance from junction to ambient 40 KW Note 1 The value of Rinc h depends on the application see Fig 3 1997 Aug 14 6 Philips Semiconductors 2 x 23 W high efficiency car radio power amplifier Heatsink design There are two parameters that determine the size of the heatsink The first is the rating for the virtual junction temperature and the second is the ambient temperature at which the amplifier must still deliver its full power in the BTL mode With a conventional BTL amplifier the maximum power dissipation with a music like signal at each amplifier will be approximately two times 5 W At a virtual junction temperature of 150 C and a maximum ambient temperature of 60 C Rihwj c 1 3 K W and Rin c n 0
14. e gain common mode rejection ratio THD 10 f 1kHz R 00 supply voltage ripple rejection DC output offset voltage f 1kHz R 02 channel separation AGy channel unbalance 1 dB ORDERING INFORMATION TYPE PACKAGE NUMBER NAME DESCRIPTION VERSION TDA1561Q DBS13P plastic DIL bent SIL power package 13 leads lead length 12 mm SOT141 6 1 997 Aug 14 Philips Semiconductors 2 x 23 W high efficiency car radio power amplifier BLOCK DIAGRAM Preliminary specification TDA1561Q Vp gt OUT OUT1 Ct OUT2 gt OUT2 1997 Aug 14 3 IN1 CIN REFERENCE THERMAL HIGHER SOURCES SHORT CIRCUIT TEMPERATURE MUTE STANDBY PROTECTION BTL DISABLE MODE HVp IN2 Fig 1 Block diagram TDA1561Q MLD214 Philips Semiconductors Preliminary specification 2 x 23 W high efficiency car radio power 2 TDA1561Q amplifier PINNING SYMBOL PIN DESCRIPTION input 1 half supply voltage control input mute standby operating SE only MNI ground 1 DE S gt m RIO O c a inverting output 1 O E zl o o non inverting output 1 supply voltage inverting output 2 lt v O c v o I non inverting output 2 ground 2 o electrolytic capacitor for single
15. n DC adjusted e On operation e SE only operation BTL disabled 1997 Aug 14 Preliminary specification TDA1561Q The device is fully protected against short circuiting of the output pins to ground and to the supply voltage It is also protected against short circuiting the loudspeaker and high junction temperatures In the event of a permanent short circuit condition to ground or the supply voltage the output stage will be switched off causing a low dissipation With permanent short circuiting of the loudspeaker the output stage will be repeatedly switched on and off The duty cycle in the on condition is low enough to prevent excessive dissipation To avoid plops during switching from mute to on or from on to mute standby while an input signal is present a built in zero crossing detector allows only switching at zero input voltage However when the supply voltage drops below 6 V e g engine start the circuit mutes immediately avoiding clicks coming from electronic circuitry preceding the power amplifier The voltage of the SE electrolytic capacitor pin 11 is always kept at 0 5Vp by means of a voltage buffer see Fig 1 The value of this capacitor has an important influence on the output power in SE mode especially at low signal frequencies a high value is recommended to minimize dissipation at low frequencies Philips Semiconductors Preliminary specification 2 x 23 W high efficiency
16. nductors Argentina see South America Australia 34 Waterloo Road NORTH RYDE NSW 2113 Tel 61 2 9805 4455 Fax 61 2 9805 4466 Austria Computerstr 6 A 1101 WIEN P O Box 213 Tel 43 160 1010 Fax 43 160 101 1210 Belarus Hotel Minsk Business Center Bld 3 r 1211 Volodarski Str 6 220050 MINSK Tel 375 172 200 733 Fax 375 172 200 773 Belgium see The Netherlands Brazil see South America Bulgaria Philips Bulgaria Ltd Energoproject 15th floor 51 James Bourchier Blvd 1407 SOFIA Tel 359 2 689 211 Fax 359 2 689 102 Canada PHILIPS SEMICONDUCTORS COMPONENTS Tel 1 800 234 7381 China Hong Kong 501 Hong Kong Industrial Technology Centre 72 Tat Chee Avenue Kowloon Tong HONG KONG Tel 852 2319 7888 Fax 852 2319 7700 Colombia see South America Czech Republic see Austria Denmark Prags Boulevard 80 PB 1919 DK 2300 COPENHAGEN S Tel 45 32 88 2636 Fax 45 31 57 0044 Finland Sinikalliontie 3 FIN O2630 ESPOO Tel 358 9 615800 Fax 358 9 61580920 France 4 Rue du Port aux Vins BP317 92156 SURESNES Cedex Tel 33 1 40 99 6161 Fax 33 1 40 99 6427 Germany HammerbrookstraBe 69 D 20097 HAMBURG Tel 49 40 23 53 60 Fax 49 40 23 536 300 Greece No 15 25th March Street GR 17778 TAVROS ATHENS Tel 30 1 4894 339 239 Fax 30 1 4814 240 Hungary see Austria India Philips INDIA Ltd Band Box Building 2nd floor 254 D Dr Annie Besant Road Worli MUMBAI 400 0
17. s independent of Rs see Fig 6 Vi 0 V 1997 Aug 14 9 Philips Semiconductors Preliminary specification 2 x 23 W high efficiency car radio power 1 TDA1561Q amplifier TEST AND APPLICATION INFORMATION 1000 E38 alt Ted 220nF Rs input 1 E 6 OUT1 220 nF 10 nF 4Q 3 92 OUTI HVp 100 nF 3 90 C41 L 7 0 5Rg CIN 1000 uF if l z 8 V A 470 nF gt Lio L 100 nF nF TDA1561Q 4Q 3 9 Q aso om Rs IN2 input 2 220 nF GND1 GND2 MLD223 Fig 5 Test diagram 1997 Aug 14 10 Philips Semiconductors Preliminary specification 2 x 23 W high efficiency car radio power amplifier TDA1561Q 1000 uF EL 100nF Rs t 220 nF 10nF 3 90 100nF 1 Hs 100 nF od 0 5Rg A 2 x 220 nF I ev OUT2 10 1 100 nF TT nF TDA1561Q 4 0 390 399 OUT2 Rs MLD213 Jb signal ground power ground Connect Boucherot filter to pin 4 respectively pin 10 with the shortest possible connection Fig 6 Application diagram 1997 Aug 14 11 Philips Semiconductors Preliminary specification 2 x 23 W high efficiency car radio power amplifier TDA1561Q 86 36 43 18 DB loccocce B CE GND gnd
18. troduction There is no soldering method that is ideal for all IC packages Wave soldering is often preferred when through hole and surface mounted components are mixed on one printed circuit board However wave soldering is not always suitable for surface mounted ICs or for printed circuits with high population densities In these situations reflow soldering is often used This text gives a very brief insight to a complex technology A more in depth account of soldering ICs can be found in our IC Package Databook order code 9398 652 90011 Soldering by dipping or by wave The maximum permissible temperature of the solder is 260 C solder at this temperature must not be in contact with the joint for more than 5 seconds The total contact time of successive solder waves must not exceed 5 seconds DEFINITIONS Data sheet status Objective specification Preliminary specification TDA1561Q The device may be mounted up to the seating plane but the temperature of the plastic body must not exceed the specified maximum storage temperature T si max If the printed circuit board has been pre heated forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit Repairing soldered joints Apply a low voltage soldering iron less than 24 V to the lead s of the package below the seating plane or not more than 2 mm above it If the temperature of the soldering iron bit is
19. unction of frequency Fig 24 Mode select circuit 1997 Aug 14 20 Philips Semiconductors Preliminary specification 2 x 23 W high efficiency car radio power amplifier TDA1561Q 1 2 3 MBH691 Vp Vload Vp Vp Vmaster 1 2 Vp 0 Vp Vslave 1 2 Vp See Fig 5 Vioad Ve Vs or Vg Vg Vmaster Ve or Va Vslave V5 or Vo Fig 25 Output waveforms 1997 Aug 14 21 Philips Semiconductors Preliminary specification 2 x 23 W high efficiency car radio power i TDA1561Q amplifier PACKAGE OUTLINE DBS13P plastic DIL bent SIL power package 13 leads lead length 12 mm SOT141 6 non concave x view B mounting base side es A DIMENSIONS mm are the original dimensions UNIT A A2 bp c D d Da 4 6 24 0 15 5 4 2 0 60 0 38 23 6 19 6 m Note 1 Plastic or metal protrusions of 0 25 mm maximum per side are not included OUTLINE REFERENCES EUROPEAN VERSION JEDEC EIAJ PROJECTION SOT141 6 E40 se ISSUE DATE 1997 Aug 14 22 Philips Semiconductors 2 x 23 W high efficiency car radio power amplifier SOLDERING In
Download Pdf Manuals
Related Search