Kingston Technology ValueRAM KVR13LR9S4K4/16I
Contents
1. Interleave without any limit sequential with starting address 000 only 4 with tCCD 4 which does not allow seamless read or write either on the fly using A12 or MRS e Bi directional Differential Data Strobe e Internal self calibration Internal self calibration through ZQ pin RZQ 240 ohm 1 e On Die Termination using ODT pin e On DIMM thermal sensor Grade B e Average Refresh Period 7 8us at lower than TCASE 85 C 3 9us at 85 C lt TCASE lt 95 C e Asynchronous Reset Continued gt gt e PCB Height 1 180 830 00mm double sided component kingston com Document No VALUERAM1133 001 B00 01 22 13 Page 1 continued ValueRAM MODULE DIMENSIONS TOLL OO units millimeters ND O ES oO cO P GE Hi a Se e 2 K E gt eae SS N S 3 D z 5 gt R S CO 30 00 O SE 20 60x4 24 Ba 21 80x2 e 18 80x2 15 80x2 J L R 0 65 MAX TYPICAL 11 00x2 L 8 00x2 3 80 S _ f 0 000 an L t g noeh CHAMFER 0 50 X 45 DEG 4 PLACES OOo CO LO LD DNN r GE D LO ro kingston com Document No VALUERAM1133 001 B00 Page 22. kingston ime Cann ORL G Y Memory Module Specifications Value P KVR13LR9S4K4 16l 16GB 4GB 512M x 72 Bit x 4 pcs PC3L 10600 CL9 Registered w Parity 240 Pin DIMM Kit DESCRIPTION SPECIFICATIONS ValueRAM s KVR13LR9S4K4 16l is a kit of four 512M x 72 bit CL IDD 9 cycles 4GB DDR3L 1333 CL9 SDRAM Synchronous DRAM low Row Cycle Time tRCmin 49 5ns min voltage Intel Compatibility Tested registered w parity 1Rx4 Refresh to Activelperesh 160ns min ECC memory modules based on eighteen 512M x 4 bit FBGA Command Time tRFCmin components Total kit capacity is 16GB The SPDs are pro Row Active Time tRASmin 36ns min grammed to JEDEC standard latency DDR3 1333 timing of Maximum Operating Power 1 35V 5 040W 9 9 9 at 1 35V and 1 5V Each 240 pin DIMM uses gold contact 1 50V 6 006 W fingers The electrical and mechanical specifications are as UL Rating 94 0 TOLONG Operating Temperature 0 C to 85 C Storage Temperature 55 C to 100 C FEATURES Power will vary depending on the SDRAM and e JEDEC standard 1 35V 1 28V 1 45V and 1 5V 1 425V Register PLL used 1 575V Power Supply e VDDQ 1 35V 1 28V 1 45V and 1 5V 1 425V 1 575V e 667MHz fCK for 13833Mb sec pin e 8 independent internal bank e Programmable CAS Latency 9 8 7 6 e Programmable Additive Latency 0 CL 2 or CL 1 clock e Programmable CAS Write Latency CWL 7 DDR38 1333 e 8 bit pre fetch e Burst Length 8
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