Philips TZA3046 User's Manual
Contents
1. Co TZA3046 TZA3046 negative 001aae513 bias voltage 001aae514 Fig 3 The PIN diode connected between Fig 4 The PIN diode connected between the input and pad DREF the input and a negative supply voltage Koninklijke Philips Electronics N V 2006 All rights reserved Product data sheet Rev 01 19 May 2006 5 of 15 Philips Semiconductors TZA3046 Fiber Channel Gigabit Ethernet transimpedance amplifier 7 2 Automatic gain control The TZA3046 transimpedance amplifier can handle input currents from 2 5 uA to 1 7 mA which is equivalent to a dynamic range of 56 dB electrical equivalent with 28 dB optical At low input currents the transimpedance must be high to obtain enough output voltage and the noise should be low enough to guarantee a minimum bit error rate At high input currents however the transimpedance should be low to prevent excessive distortion at the output stage To achieve the dynamic range the gain of the amplifier depends on the level of the input signal This is achieved in the TZA3046 by an AGC loop The AGC loop comprises a peak detector and a gain control circuit The peak detector detects the amplitude of the signal and stores it in a hold capacitor The hold capacitor voltage is compared to a threshold voltage The AGC is only active when the input signal level is larger than the threshold level and is inactive when the input signal is smaller than the thresh2. s cca cee een ens 10 Application information 11 Test information 00 e eee eee 12 Bare die information 000e0ee 13 Package outline 000 e eee eee 14 Handling information 00000ee 14 1 GEM O LA ceo Sins de Sage GM haan Nee eee Uae ead 14 2 Additional information 15 Abbreviations 0 cece ee eee 16 Revision history 00 eee eens 17 Legal information 00 eee eenee 17 1 Data sheet status 2 0 17 2 Definitions 02 00000 200s 17 3 DISCIAIMETS cic e E A R EE 17 4 Trademarks 00000 0c 18 Contact information 0 02006 19 Contents PHILIPS Fiber Channel Gigabit Ethernet transimpedance amplifier Please be aware that important notices concerning this document and the product s described herein have been included in section Legal information Koninklijke Philips Electronics N V 2006 All rights reserved For more information please visit http www semiconductors philips com For sales office addresses email to sales addresses www semiconductors philips com Date of release 19 May 2006 Document identifier TZA3046_1
3. applying a voltage to pad AGC In this configuration connecting pad AGC to ground gives maximum transimpedance and connecting it to Vcc gives minimum transimpedance This is depicted in Figure 7 The AGC voltage should be derived from the Vcc for proper functioning For maximum freedom on bonding location 2 pads are available for AGC pads 6 and 15 These pads are internally connected Both pads can be used if necessary 001aae517 transimpedance kQ 0 3 0 5 0 7 0 9 Vaac Vcc Fig 7 Transimpedance as function of the AGC voltage 7 3 Monitoring RSSI via IDREF_MON To facilitate RSSI monitoring in modules e g SFF 8472 compliant SFP modules a current output is provided This output gives a current which is 20 of the average DREF current through the 290 Q bias resistor By connecting a resistor to the IDREF_MON output a voltage proportional to the average input power can be obtained The RSSI monitoring is implemented by measuring the voltage over the 290 bias resistor This method is preferred over a simple current mirror because at small photo currents the voltage drop over the resistor is very small This gives a higher bias voltage yielding better performance of the photodiode For maximum freedom on bonding location 2 pads are available for IDREF_MON pads 5 and 16 These pads are internally connected Both pads can be used if necessa
4. in FTTx systems PHILIPS Philips Semiconductors TZA3046 4 Ordering information Table 1 Fiber Channel Gigabit Ethernet transimpedance amplifier Ordering information Type number TZA3046U Package Name Description Version bare die dimensions approximately 0 82 mm x 1 3 mm 5 Block diagram i Cycc i lt IDREF_MON IDREF_MON 5 or 16 ai 4or17 m 0 2 x loner lt yiprer Y RpreF 290 Q DREF 1 or 3 lt GAIN CONTROL AGC 6or15 TZA3046 lt RIDREF_MON Corer ZN DPHOTO PEAK DETECTOR single ended to output differential converter buffers IPIN IPHOTO 2 gt Fig 1 Block diagram low noise amplifier 7 or 13 OUTQ gt ga 8 or 14 OUT 9 10 11 12 GND 001aae511 TZA3046_1 Koninklijke Philips Electronics N V 2006 All rights reserved Product data sheet Rev 01 19 May 2006 2 of 15 Philips Semiconductors TZA3046 6 Pinning information 6 1 Pinning Fiber Channel Gigabit Ethernet transimpedance amplifier IDREF_MON Fig 2 Pin configuration Ni Voc Voc IDREF_MON AGC AGC TZA3046 OUTQ OUT OUT OUTQ GND a L 10 M oa D GND O Z o 001aae512 6 2 Pin description
5. is available on the Internet at URL http www semiconductors philips com 17 2 Definitions Draft The document is a draft version only The content is still under internal review and subject to formal approval which may result in modifications or additions Philips Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information Short data sheet A short data sheet is an extract from a full data sheet with the same product type number s and title A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information For detailed and full information see the relevant full data sheet which is available on request via the local Philips Semiconductors sales office In case of any inconsistency or conflict with the short data sheet the full data sheet shall prevail 17 3 Disclaimers General Information in this document is believed to be accurate and reliable However Philips Semiconductors does not give any representations or warranties expressed or implied as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information Right to make changes Philips Semiconductors reserves the right to make changes to information published in this document including without
6. proper choice of PIN diode and typically a high reverse voltage 2 Reducing the parasitics around the input pad This is achieved by placing the PIN diode as close as possible to the TIA The PIN diode can be biased with a positive or a negative voltage Figure 3 shows the PIN diode biased positively using the on chip bias pad DREF The voltage at DREF is derived from Vcc by a low pass filter comprising internal resistor Rprer and external capacitor C2 which decouples any supply voltage noise The value of external capacitor C2 affects the value of PSRR and should have a minimum value of 470 pF Increasing this value improves the value of PSRR The current through Rprer is measured and sourced at pad IDREF_MON see Section 7 3 If the biasing for the PIN diode is done external to the IC pad DREF can be left unconnected If a negative bias voltage is used the configuration shown in Figure 4 can be used In this configuration the direction of the signal current is reversed to that shown in Figure 3 It is essential that in these applications the PIN diode bias voltage is filtered to achieve the best sensitivity For maximum freedom on bonding location 2 outputs are available for DREF pads 1 and 3 These are internally connected Both outputs can be used if necessary If only one is used the other can be left open Voc Vcc DREF 1 or3 RDREF DREF 1 or3 RDREF C C2 ji 470 pF AS
7. AGC loop which reduces the preamplifier feedback resistance so that the amplifier remains linear over the whole input range The AGC loop hold capacitor is integrated on chip so an external capacitor is not required The bandwidth of TZA3046 is optimized for FC GE application It works from DC onward due to the absence of offset control loops Therefore the amount of Consecutive Identical Digits CID will not effect the output waveform A differential amplifier converts the output of the preamplifier to a differential voltage PIN diode connections The performance of an optical receiver is largely determined by the combined effect of the transimpedance amplifier and the PIN diode In particular the method used to connect the PIN diode to the input pad IPHOTO and the layout around the input pad strongly influences the main parameters of a transimpedance amplifier such as sensitivity bandwidth and PSRR Sensitivity is most affected by the value of the total capacitance at the input pad Therefore to obtain the highest possible sensitivity the total capacitance should be as low as possible Koninklijke Philips Electronics N V 2006 All rights reserved Product data sheet Rev 01 19 May 2006 4 of 15 Philips Semiconductors TZA3046 TZA3046_1 Fiber Channel Gigabit Ethernet transimpedance amplifier The parasitic capacitance can be minimized through 1 Reducing the capacitance of the PIN diode This is achieved by
8. TZA3046 Fiber Channel Gigabit Ethernet transimpedance amplifier Rev 01 19 May 2006 Product data sheet 1 General description The TZA3046 is a transimpedance amplifier with Automatic Gain Control AGC designed to be used in Fiber Channel Gigabit Ethernet FC GE fiber optic links It amplifies the current generated by a photo detector PIN diode or avalanche photodiode and converts it to a differential output voltage It offers a current mirror of average photo current for RSSI monitoring to be used in SFF 8472 compliant modules The low noise characteristics makes it suitable for FC GE applications but also for FTTx applications CAUTION A This device is sensitive to ElectroStatic Discharge ESD Therefore care should be taken during transport and handling 2 Features 3 Applications Low equivalent input noise current typically 126 nA RMS Wide dynamic range typically 2 5 uA to 1 7 mA p p Differential transimpedance of 7 5 KQ typical Bandwidth from DC to 1050 MHz typical Differential outputs On chip AGC with possibility of external control Single supply voltage 3 3 V range 2 97 V to 3 6 V Bias voltage for PIN diode On chip current mirror of average photo current for RSSI monitoring Identical ports available on both sides of die for easy bond layout and RF polarity selection Digital fiber optic receiver modules in telecommunications transmission systems in high speed data networks or
9. Table 2 Bonding pad description Bonding pad locations with respect to the center of the die see Figure 10 X and Y are in um Symbol Pad X DREF 1 493 6 IPHOTO 2 493 6 DREF 3 493 6 Voc 4 353 6 IDREF_MON 5 213 6 AGC 6 73 6 OUTQ 7 66 4 OUT 8 206 4 GND 9 346 4 GND 10 486 4 TZA3046_1 Y 140 140 278 6 278 6 278 6 278 6 278 6 278 6 278 6 Type output input output supply output input output output ground ground Description bias voltage output for PIN diode connect cathode of PIN diode to pad 1 or pad 3 current input anode of PIN diode should be connected to this pad bias voltage output for PIN diode connect cathode of PIN diode to pad 1 or pad 3 supply voltage connect supply voltage to pad 4 or pad 17 current output for RSSI measurements connect a resistor to pad 5 or pad 16 and ground AGC voltage use pad 6 or pad 15 data output complement of pad OUT use pad 7 or pad 13 data output use pad 8 or pad 14 11 ground connect together pads 9 10 11 and pad 12 as many as possible ground connect together pads 9 10 11 and pad 12 as many as possible Koninklijke Philips Electronics N V 2006 All rights reserved Product data sheet Rev 01 19 May 2006 3 of 15 Philips Semiconductors TZA3046 Fiber Channel Gigabit Ethernet transimpedance amplifier Table 2 Bonding pad description continued Bonding pad locations with respect to th
10. ance of the die or systems after third party sawing handling packing or assembly of the die It is the responsibility of the customer to test and qualify their application in which the die is used All die sales are conditioned upon and subject to the customer entering into a written die sale agreement with Philips Semiconductors through its legal department 17 4 Trademarks Notice All referenced brands product names service names and trademarks are the property of their respective owners For additional information please visit http www semiconductors philips com For sales office addresses send an email to sales addresses www semiconductors philips com TZA3046_1 Koninklijke Philips Electronics N V 2006 All rights reserved Product data sheet Rev 01 19 May 2006 14 of 15 Philips Semiconductors TZA3046 19 Contents 1 General description 02005 2 FeatureS 0 0c ee eee eee eee eens 3 Applications 0 00 eee eee eee 4 Ordering information 0005 5 Block diagram 00 cece eee eee 6 Pinning information 0 00seeee 6 1 PINNING seigi eect elena ete ea eked 6 2 Pin description 0 0 eee eee 7 Functional description 000 7 1 PIN diode connections 7 2 Automatic gain control 7 3 Monitoring RSSI via IDREF_MON 8 Limiting values 00 0 ese e eee eee 9 CharacteristiCS
11. e center of the die see Figure 10 X and Y are in um Symbol Pad X Y Type Description GND 11 486 4 278 6 ground ground connect together pads 9 10 11 and pad 12 as many as possible GND 12 346 4 278 6 ground ground connect together pads 9 10 11 and pad 12 as many as possible OUTQ 13 206 4 278 6 output data output complement of pad OUT use pad 7 or pad 13 OUT 14 66 4 278 6 output data output use pad 8 or pad 14 1 AGC 15 73 6 278 6 input AGC voltage use pad 6 or pad 15 IDREF_MON 16 213 6 278 6 output current output for RSSI measurements connect a resistor to pad 5 or pad 16 and ground Voc 17 353 6 278 6 supply supply voltage connect supply voltage to pad 4 or pad 17 1 These pads go HIGH when current flows into pad IPHOTO 7 Functional 7 1 TZA3046_1 description The TZA3046 is a Translmpedance Amplifier TIA intended for use in fiber optic receivers for signal recovery in FC GE or FTTx applications It amplifies the current generated by a photo detector PIN diode or avalanche photodiode and converts it to a differential output voltage The most important characteristics of the TZA3046 are high receiver sensitivity wide dynamic range and large bandwidth Excellent receiver sensitivity is achieved by minimizing transimpedance amplifier noise The TZA3046 has a wide dynamic range to handle the signal current generated by the PIN diode which can vary from 2 5 uA to 1 7 mA p p This is implemented by an
12. ie Parameter Glass passivation Bonding pad dimension Metallization Thickness Die dimension Backing Attach temperature Attach time Value 0 3 um PSG PhosphoSilicate Glass on top of 0 8 um silicon nitride minimum dimension of exposed metallization is 90 um x 90 um pad size 100 um x 100 um except pads 2 and 3 which have exposed metallization of 80 um x 80 um pad size 90 um x 90 um 2 8 um AlCu 380 um nominal 820 um x 1300 um 20 um silicon electrically connected to GND potential through substrate contacts lt 440 C recommended die attach is glue lt 15s 13 Package outline Not applicable TZA3046_1 Koninklijke Philips Electronics N V 2006 All rights reserved Product data sheet Rev 01 19 May 2006 12 of 15 Philips Semiconductors TZA3046 Fiber Channel Gigabit Ethernet transimpedance amplifier 14 Handling information 14 1 General Inputs and outputs are protected against electrostatic discharge in normal handling However to be completely safe you must take normal precautions appropriate to handling MOS devices see JESD625 A and or IEC61340 5 14 2 Additional information Pad IPHOTO has limited protection to ensure good RF performance This pad should be handled with extreme care 15 Abbreviations Table 6 Abbreviations Acronym Description BER Bit Error Rate FTTX Fiber To The x OC3 Optical Carrier level 3 155 52 Mbit s PIN Posit
13. ive Intrinsic Negative PSRR Power Supply Rejection Ratio RSSI Received Signal Strength Indicator SDH Synchronous Digital Hierarchy SFP Small Form factor Pluggable SONET Synchronous Optical NETwork STM1 Synchronous Transport Module 1 155 52 Mbit s 16 Revision history Table 7 Revision history Document ID Release date Data sheet status Change notice Supersedes TZA3046_1 20060519 Product data sheet TZA3046_1 Koninklijke Philips Electronics N V 2006 All rights reserved Product data sheet Rev 01 19 May 2006 13 of 15 Philips Semiconductors TZA3046 Fiber Channel Gigabit Ethernet transimpedance amplifier 17 Legal information 17 1 Data sheet status Document status JI2 Product status Definition Objective short data sheet Development Preliminary short data sheet Qualification Product short data sheet Production This document contains data from the objective specification for product development This document contains data from the preliminary specification This document contains the product specification 1 Please consult the most recently issued document before initiating or completing a design 2 The term short data sheet is explained in section Definitions 3 The product status of device s described in this document may have changed since this document was published and may differ in case of multiple devices The latest product status information
14. limitation specifications and product descriptions at any time and without notice This document supersedes and replaces all information supplied prior to the publication hereof Suitability for use Philips Semiconductors products are not designed authorized or warranted to be suitable for use in medical military aircraft space or life support equipment nor in applications where failure or malfunction of a Philips Semiconductors product can reasonably be expected to result in personal injury death or severe property or environmental damage Philips Semiconductors accepts no liability for inclusion and or use of Philips Semiconductors products in such equipment or applications and therefore such inclusion and or use is for the customer s own risk Applications Applications that are described herein for any of these products are for illustrative purposes only Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification 18 Contact information Limiting values Stress above one or more limiting values as defined in the Absolute Maximum Ratings System of IEC 60134 may cause permanent damage to the device Limiting values are stress ratings only and and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied Exposure to limiting values for extended pe
15. nly one pair used The other pair should be left open Two examples of the bonding possibilities are shown in Figure 8 001aae518 Fig 8 Application diagram highlighting flexible pad lay out TZA3046_1 Koninklijke Philips Electronics N V 2006 All rights reserved Product data sheet Rev 01 19 May 2006 10 of 15 9002 Ae 61 10 AeY eays Lep JONpold GLO LL L 9POEWZL pamasa SUDU Ily 900Z A N 91U01193 3 Sdijiyd Ox PIUILOY NETWORK ANALYZER S PARAMETER TEST SET PORT1 PORT2 ry Zo 50 2 Zo 50 Q SAMPLING OSCILLOSCOPE DC IN 4or 17 O 8 or 14 TRIGGER Y f INPUT A TZA3046 Zo 502 3302 IPHOTO R 7or13 9 10 11 12 CLOCK 001aae519 Total impedance of the test circuit Ztottc is calculated by the equation Ztot te S21 X R Zi x 2 where So is the insertion loss of ports 1 and 2 Typical values R 330 9 Zi 30 Q Fig 9 Test circuit uonewoyul S L Lh Jaijijdue vuep dw suen 3u194 3 Wqebin jauueyy 13q l4 9VOEVZL S1OJONPUOIDIWIS Sdijiud Philips Semiconductors TZA3046 12 Bare die information Fiber Channel Gigabit Ethernet transimpedance amplifier oonu Origin is center of die Fig 10 Bonding pad locations QQAF 001aac627 Table 5 Physical characteristics of the bare d
16. nt temperature 40 25 85 C Rir small signal measured differentially 5 5 7 5 10 5 kQ transresistance AC coupled Ri gif 100 Q f 3dB h high frequency Cpin 0 5 pF 800 1050 s MHz 3 dB point In rms itg tot total integrated RMS noise referenced to input Oy 126 164 nA current over bandwidth Cp 0 5 pF f 3dB min 875 MHz Automatic gain control loop pad AGC tatt attack time AGC pad unconnected 14 us tdecay decay time AGC pad unconnected 40 us Vih AGC p p peak to peak AGC referenced to output 125 mV threshold voltage measured differentially TZA3046_1 Koninklijke Philips Electronics N V 2006 All rights reserved Product data sheet Rev 01 19 May 2006 8 of 15 Philips Semiconductors TZA3046 Fiber Channel Gigabit Ethernet transimpedance amplifier Table 4 Characteristics continued Typical values at Tj 25 C and Vcc 3 3 V minimum and maximum values are valid over the entire ambient temperature range and supply voltage range all voltages are measured with respect to ground unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit Bias voltage pad DREF R DREF VCC resistance between pin tested at DC level 260 290 320 Q DREF and pin Voc Tamb 25 C TCRDREF temperature coefficient of 0 33 are RDREF Input pad IPHOTO lIPHOTO p p peak to peak current on l8 1000 1700 uA pad IPHOTO Vbias i input bias voltage 700 850 1000 mV Monitor pad IDREF_MON Vion m
17. old level When the AGC is inactive the transimpedance is at its maximum When the AGC is active the feedback resistor value of the transimpedance amplifier is reduced reducing its transimpedance to keep the output voltage constant Figure 5 shows the transimpedance as function of the input current To reduce sensitivity to offsets and output loads the AGC detector senses the output just before the output buffer Figure 6 shows the AGC voltage as function of the input current transimpedance kQ 001aae515 35 001aae516 Vaac v 2 5 1 5 0 5 1 10 102 103 104 1 10 102 103 104 IPin HA Ipin HA Fig 5 Transimpedance as function of the PIN diode Fig 6 AGC voltage as function of the PIN diode current current TZA3046_1 Koninklijke Philips Electronics N V 2006 All rights reserved Product data sheet Rev 01 19 May 2006 6 of 15 Philips Semiconductors TZA3046 Fiber Channel Gigabit Ethernet transimpedance amplifier For applications where the transimpedance is controlled by the TIA it is advised to leave the AGC pads unconnected to achieve fast attack and decay times The AGC function can be overruled by
18. onitor voltage 0 Voc 0 4 V lipREF_MON IpREF monitor current ratio ratio lIDREF_MON lpREF 19 5 20 20 5 lotiset mon monitor offset current Tamb 25 C 0 10 20 uA TCi oftset mon temperature coefficient of 30 nA C monitor offset current Data outputs pads OUT and OUTQ Vovem common mode output AC coupled Riqit 100 Q Veco 1 2 V voltage Vo aif p p peak to peak differential AC coupled Rigi 100 Q output voltage lpn 2 5 pA p p x Rir 14 19 mV Ipin 100 uA p p 120 mV Ipin 1500 uA p p 4 325 600 mV Rovdir differential output tested at DC level 100 Q resistance tr rise time 20 to 80 150 ps Ipin 100 uA p p tr fall time 80 to 20 150 ps Ipin 100 uA p p 1 Guaranteed by design 2 Max input current is guaranteed for BER lt 10710 3 Max input current is guaranteed for Tamb 25 4 Max value of 500 mV belongs to Ipjy 1250 uA p p TZA3046_1 Koninklijke Philips Electronics N V 2006 All rights reserved Product data sheet Rev 01 19 May 2006 9 of 15 Philips Semiconductors TZA3046 Fiber Channel Gigabit Ethernet transimpedance amplifier 10 Application information For maximum freedom on bonding location 2 outputs are available for OUT and OUTQ The outputs should be used in pairs pad 14 with pad 7 or pad 8 with pad 13 Pad 8 is internally connected with pad 14 pad 7 is internally connected with pad 13 The device is guaranteed with o
19. riods may affect device reliability Terms and conditions of sale Philips Semiconductors products are sold subject to the general terms and conditions of commercial sale as published at http www semiconductors philips com profile terms including those pertaining to warranty intellectual property rights infringement and limitation of liability unless explicitly otherwise agreed to in writing by Philips Semiconductors In case of any inconsistency or conflict between information in this document and such terms and conditions the latter will prevail No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant conveyance or implication of any license under any copyrights patents or other industrial or intellectual property rights Bare die All die are tested on compliance with all related technical specifications as stated in this data sheet up to the point of wafer sawing for a period of ninety 90 days from the date of delivery by Philips Semiconductors If there are data sheet limits not guaranteed these will be separately indicated in the data sheet There are no post packing tests performed on individual die or wafers Philips Semiconductors has no control of third party procedures in the sawing handling packing or assembly of the die Accordingly Philips Semiconductors assumes no liability for device functionality or perform
20. ry If only one is used the other can be left open TZA3046_1 Koninklijke Philips Electronics N V 2006 All rights reserved Product data sheet Rev 01 19 May 2006 7 of 15 Philips Semiconductors TZA3046 Fiber Channel Gigabit Ethernet transimpedance amplifier 8 Limiting values Table 3 Limiting values In accordance with the Absolute Maximum Rating System IEC 60134 Symbol Parameter Conditions Voc supply voltage Va voltage on any other pad pin IPHOTO OUT OUTQ AGC IDREF_MON DREF ln current on any other pad pin IPHOTO OUT OUTQ AGC IDREF_MON DREF Prot total power dissipation Tamb ambient temperature Tj junction temperature Tstg storage temperature Min 0 5 0 5 0 5 0 5 0 5 4 0 10 0 2 4 0 Max 3 8 2 0 Vcc 0 5 Voc 0 5 Voc 0 5 4 0 10 0 2 4 0 300 85 150 150 mA mA mA mA mW C C C 9 Characteristics Table 4 Characteristics Typical values at Tj 25 C and Vcc 3 3 V minimum and maximum values are valid over the entire ambient temperature range and supply voltage range all voltages are measured with respect to ground unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit Voc supply voltage 2 97 3 3 3 6 V loc supply current AC coupled Ri gir 100 Q 21 23 mA excluding IpRer and lipREF_MON Prot total power dissipation Voc 3 3 V 70 76 mW Tj junction temperature 40 125 C Tamb ambie
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