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        Kingston Technology ValueRAM 4GB
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1.  component    kingston com    kingston    TECHINOLOGY      Value    SPECIFICATIONS   CL IDD  11 cycles   Row Cycle Time  tRCmin  48 125ns  min    Refresh to Active Refresh 160ns  min    Command Time  tRFCmin    Row Active Time  tRASmin  35ns  min      Maximum Operating Power  1 35V    2 430 W    1 50V    2 700 W   94V 0   0   C to 85   C     55   C to  100 C    UL Rating  Operating Temperature  Storage Temperature     Power will vary depending on the SDRAM and  Register PLL used     SDRAM SUPPORTED    Elpida  D Die     Gontinued  gt  gt     Document No  VALUERAM1295 001 A00 04 11 13 Page 1       continued ValueRAM    MODULE DIMENSIONS         units   millimeters                                                     D 00 00 00 00 m 010D     o M   D D NT N s  NE  ae u    a N 00 N D o   i  Oo   gt  N M To O 5   ey e  30 00  29 60x4 H  24 80x2    21 80x2  18 80x2   sed  15 80x2   R 0 65 MAX   TYPICAL  11 00x2 D      8 00x2    3 80  2 30x2    A     0 000 X  50       0 10        gt  p CHAMFER 0 50 X 45 DEG  bb PLACES  OOo O LO LO  DEW   T  oe   p  m LO        kingston com Document No  VALUERAM1295 001 A00 Page 2    
2. Memory Module Specifications       KVR16LR11D8 4ED    4GB 2Rx8 512M x 72 Bit PC3L 12800  CL11 Registered w Parity 240 Pin DIMM    DESCRIPTION    This document describes ValueRAM s 512M x 72 bit  4GB   DDR3L 1600 CL11 SDRAM  Synchronous DRAM   low voltage   registered w parity  2Rx8 ECC  memory module  based on  eighteen 256M x 8 bit FBGA components  The SPD is pro   grammed to JEDEC standard latency DDR3 1600 timing of  11 11 11 at 1 35V and 1 5V  This 240 pin DIMM uses gold  contact fingers  The electrical and mechanical specifications  are as follows     FEATURES    e JEDEC standard 1 35V  1 28V   1 45V  and 1 5V  1 425V    1 575V  Power Supply    e VDDQ   1 35V  1 28V   1 45V  and 1 5V  1 425V   1 575V   e 800MHz fCK for 1600Mb sec pin   e 8 independent internal bank   e Programmable CAS Latency  11  10  9  8  7  6   e Programmable Additive Latency  0  CL   2  or CL   1 clock   e 8 bit pre fetch    e Burst Length  8  Interleave without any limit  seguential with  starting address    000  only   4 with tCCD   4 which does not  allow seamless read or write  either on the fly using A12 or  MRS     e Bi directional Differential Data Strobe    e Internal self  calibration   Internal self calibration through ZO  pin  RZQ   240 ohm   1      e On Die Termination using ODT pin  e On DIMM thermal sensor  Grade B     e Average Refresh Period 7 8us at lower than TCASE 85  C   3 9us at 85  C  lt  TCASE  lt  95  C    e Asynchronous Reset    e PCB  Height 1 180     30 00mm   double sided
    
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